National Institute for Materials Science (NIMS), Japan
Yasuo Koide received his Ph.D. degree from Prof. Isamu Akasaki, Nobel laureate in 2014, at Nagoya University in 1988. His PhD work was Metal Organic Vapor Phase Epitaxy (MOVPE) growth of AlxGa1-xN alloy and it’s optical and electrical properties. He fabricated the original MOVPE apparatus with special reactor design, which provided success of the highest-quality GaN and AlxGa1-xN epitaxial layers using a low-temperature buffer layer technique, together with Prof. Hiroshi Amano, Nobel laureate in 2014 and one-year younger PhD student. After Dr. Koide became an assistant professor at Nagoya University, in 1993 he became an associate professor at Kyoto University, and his work focused on development of low-resistance Ohmic contact materials for wide-bandgap and compound semiconductors, ZnSe, GaN, SiC, Diamond, InP, and GaAs, in optical and electrical devices. In 2002 he moved to National Institute for Materials Science (NIMS) Japan for focusing research on diamond epilayer growth and optical and electronic device applications. He published more than 200 papers by demonstrating deep-UV photodetectors, metal-oxide (MOS) and metal-Schottky (MES) gate transistors, logic circuits, and micromachine system (MEMS) sensor and switching devices.
Now he is Managing Director of Advanced Research Infrastructure for Materials and Nanotechnology (ARIM) Japan, Group Leader of Next-Generation Semiconductor Group in NIMS, and Visiting Professor of Nagoya University. He has more than 300 publications including technical articles, invited reviews, monographs, and books in semiconductor materials and devices. His research interest is now in hybrid electronic and photonic devices of diamond and III-nitride semiconductors/ferroelectrics and their transport and surface/interface physics.